Especificações Técnicas

THE PE42540 IS A HARP TECHNOLOGY ENHANCED ABSORPTIVE SP4T RF SWITCH DEVELOPED ON ULTRACMOS PROCESS TECHNOLOGY. THIS SWITCH IS DESIGNED SPECIFICALLY TO SUPPORT THE REQUIREMENTS OF THE TEST EQUIPMENT AND ATE MARKET. IT COMPRISES FOUR SYMMETRIC RF PORTS AND HAS VERY HIGH ISOLATION. AN ON-CHIP CMOS DECODE LOGIC FACILITATES A TWO-PIN LOW VOLTAGE CMOS CONTROL INTERFACE AND AN OPTIONAL EXTERNAL VSS FEATURE. HIGH ESD TOLERANCE AND NO BLOCKING CAPACITOR REQUIREMENTS MAKE THIS THE ULTIMATE IN INTEGRATION AND RUGGEDNESS. THE PE42540 IS MANUFACTURED ON PSEMI ULTRACMOS PROCESS, A PATENTED VARIATION OF SILICON-ON-INSULATOR (SOI) TECHNOLOGY ON A SAPPHIRE SUBSTRATE, OFFERING THE PERFORMANCE OF GAAS WITH THE ECONOMY AND INTEGRATION OF CONVENTIONAL CMOS   FEATURES - HARP TECHNOLOGY ENHANCED - FAST SETTLING TIME - ELIMINATES GATE AND PHASE LAG - NO DRIFT IN INSERTION LOSS AND PHASE - HIGH LINEARITY: 58 DBM IIP3 - LOW INSERTION LOSS: 0.8DB @ 3GHZ, 1.0DB @ 6GHZ AND 1.2DB @ 8GHZ - HIGH ISOLATION: 45DB @ 3GHZ, 39DB @ 6GHZ AND 31DB @ 8GHZ - MAXIMUM POWER HANDLING: 30DBM @ 8GHZ - HIGH ESD TOLERANCE OF 2KV HBM ON RFC AND 1KV HBM ON ALL OTHER PINS       PRODUCT ATTRIBUTE ATTRIBUTE VALUE CIRCUIT SP4T TEST FREQUENCY 8GHZ IMPEDANCE 50OHM TOPOLOGY ABSORPTIVE FREQUENCY RANGE 10HZ~8GHZ INSERTION LOSS 1.2DB ISOLATION 31DB P1DB 33DBM IIP3 58DBM ROHS STATUS ROHS COMPLIANT PE42540F-Z CI 42540 RF SWITCH SP4T 10HZ 8GHZ 50OHM 32LGA MAIORES DETALHES DE PE42540F-Z NO SITE DO FABRICANTE: HTTPS://WWW.PSEMI.COM/PDF/DATASHEETS/PE42540DS.PDF TAGS DE PE42540F-Z: CI 42540, CI PE42540F, CI PE42540, CI DE RF 8GHZ, TECNOLOGIA HARP,

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